Wavelength‐Selective, Narrowband Graphene Transistor with a Plasmon‐Enhanced Pyroelectric Gate

Herein, a wavelength-selective pyroelectric sensor based on graphene field-effect transistor (gFET) with plasmon-enhanced gate (PG) is reported. The PG gFET (PG-gFET) uses poly(vinylidene fluoride-co-trifluoroethylene) or PVDF-TrFE membrane doped plasmonic nanoparticles as the gate. Gold nanorods (AuNRs) silver (AgNPs) are incorporated into to enhance photothermal conversion efficiency of in specific narrowband wavelength range. effect can optically modulate potential PG-gFET; this, turn, leads change current through film transistor. PG-gFET AuNRs exhibits maximum responsivity 0.79 μA mW−1 at 660 nm. Replacing AgNPs results tuning response 488 nm 0.68 mW−1. When absent from membrane, shifted midinfrared regime 3125 nm, which associated CC absorption PVDF-TrFE. ability selectively respond different light wavelengths will benefit many fields, including sensors, spectroscopy, and imaging.